MMBTA28 Fairchild Semiconductor, MMBTA28 Datasheet - Page 3

• Manufacturer Part Number: MMBTA28
• Description: TRANSISTOR DARL NPN SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA28

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.8 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Results/Discussion
Test: (Autoclave)
Lot
Q20070473AAACLV
Q20070473ABACLV
Q20070473ACACLV
Q20070473BAACLV
Q20070473BBACLV
Q20070473BCACLV
Q20070473CAACLV
Q20070473DAACLV
Q20070473EAACLV
Q20070473FAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070473CAH3TRB
Q20070473FAH3TRB
Q20070473FBH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070473AAHTGB
Q20070473BAHTGB
Device
FDC658AP
FDN338P
Device
FDC637BNZ
FDC638APZ
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
168-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
Failure Code
Failure Code
Failure Code
Pg. 3