FMMT449 Fairchild Semiconductor, FMMT449 Datasheet - Page 2

• Manufacturer Part Number: FMMT449
• Description: TRANSISTOR NPN 30V 1A SSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FMMT449

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FMMT449FS

*Pulse Test: Pulse Width
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
OFF CHARACTERISTICS
BV
BV
BV
I
I
ON CHARACTERISTICS*
h
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
f
CBO
EBO
T
1998Fairchild Semiconducto Corporation
Symbol
FE
CE(sat)
BE(sat)
BE(on)
obo
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
300 s, Duty Cycle
Parameter
2.0%
T
A = 25°C unless otherwise noted
Page 2 of 2
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= 100 A
= 10 mA
= 1mA
= 50 mA, V
= 500 mA, V
= 1A, V
= 2A, V
= 1 A, I
= 2 A, I
= 1 A, I
= 1 A, V
= 50mA,V
= 40 V
= 40 V, Ta=100°C
= 4V
= 10 V, I
Test Conditions
B
B
B
CE
CE
CE
= 100 mA
= 200 mA
= 100 mA
CE
= 2V
= 2V
E
= 2 V
CE
= 0, f = 1MHz
CE
= 10 V, f=100MHz
= 2V
= 2V
Min
100
150
30
50
70
80
40
5
fmmt449.lwpPrNB revA
300
Max
1.25
100
100
500
1.0
10
15
1
Units
nA
MHz
mV
nA
uA
pF
V
V
V
V
V
V
-