BCV27 Fairchild Semiconductor, BCV27 Datasheet

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BCV27

Manufacturer Part Number
BCV27
Description
TRANS DARL NPN 500MA 30V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BCV27

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
350mW
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
4000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BCV27TR

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1997 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
NPN Darlington Transistor
JA
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings*
, T
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
*
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
stg
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
SOT-23
Mark: FF
Derate above 25 C
C
BCV27
Characteristic
B
Parameter
E
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
*BCV27
Max
350
357
2.8
-55 to +150
Value
1.2
30
40
10
Units
Units
mW/ C
mW
C/W
V
V
V
A
C
3

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BCV27 Summary of contents

Page 1

... Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 1.2 A -55 to +150 C Max Units *BCV27 350 mW 2.8 mW/ C 357 C/W 3 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...

Page 3

Typical Characteristics Collector-Cutoff Current vs Ambient Temperature 100 V = 30V 0.1 0. AMBIE NT TEMP ERATURE ( C) A Input and Output Capacitance vs Reverse Voltage 0.1 ...

Page 4

... Human Readable Label sample SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0 Carrier Tape Cover Tape Trailer Tape 300mm minimum or 75 empt y poc kets ©2000 Fairchild Semiconductor International Antistatic Cover Tape Human Readable Embossed Label Carrier Tape 3P 3P SOT-23 Unit Orientation ...

Page 5

SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-23 3.15 2.77 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: A0, B0, and K0 dimensions ...

Page 6

... SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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