MMBT4126 Fairchild Semiconductor, MMBT4126 Datasheet - Page 2

• Manufacturer Part Number: MMBT4126
• Description: TRANSISTOR GP PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT4126

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 120
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4126FSTR

SMALL SIGNAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS*
V
V
V
I
I
h
V
V
f
C
C
h
NF
Symbol
CBO
EBO
T
FE
fe
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
ibo
cb
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Input Capacitance
Collector-Base Capcitance
Small-Signal Current Gain
Noise Figure
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
f = 100 MHz
V
f = 1.0 MHz
V
f = 100 kHz
I
f = 1.0 kHz
I
R
C
C
C
C
C
C
C
C
C
C
CB
EB
EB
CB
S
= 1.0 mA, I
= 10 A, I
= 10 A, I
= 2.0 mA, V
= 50 mA, V
= 50 mA, I
= 50 mA, I
= 10 mA, V
= 2.0 mA, V
= 100 A, V
=1.0 k , f=10 Hz to 15.7 kHz
= 20 V, I
= 3.0 V, I
= 0.5 V, I
= 5.0 V, I
Test Conditions
E
C
E
B
B
B
C
C
E
CE
CE
= 0
= 0
CE
= 5.0 mA
= 5.0 mA
CE
CE
= 0
= 0
= 0
= 0,
= 0,
= 1.0 V
= 20 V,
PNP General Purpose Amplifier
= 1.0 V
= 10 V,
= 5.0 V,
Min
120
250
120
4.0
25
25
60
Max
0.95
360
480
0.4
4.5
4.0
50
50
10
(continued)
Units
MHz
nA
nA
pF
pF
dB
V
V
V
V
V