MMBTA63 Fairchild Semiconductor, MMBTA63 Datasheet - Page 3

• Manufacturer Part Number: MMBTA63
• Description: TRANSISTOR DARL PNP SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: PNPr

Specifications of MMBTA63

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Package: 3SOT-23
• Configuration: Single
• Peak Dc Collector Current: 1.2 A
• Maximum Collector Emitter Saturation Voltage: 1.5@0.1mA@100mA V
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Collector Emitter Voltage: 30 V
• Minimum Dc Current Gain: 5000@10mA@5V|10000@100mA@5V
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA63FS

MPSA63 / MMBTA63 / PZTA63 Rev. A1
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
0.01
100
1.6
1.2
0.8
0.4
0.1
10
0.001
Figure 3. Base-Emitter Saturation Voltage
1
2
0
25
V
β = 1000
β
Figure 5. Collector Cutoff Current
Voltage vs Collector Current
CB
vs Ambient Temperature
Collector-Cutoff Current
= 15V
Base-Emitter Saturation
T - AMBIE NT TEMP ERATURE ( C)
vs Ambient Temperature
A
I - COLLECTOR CURRENT (A)
C
50
vs Collector Current
25 °C
0.01
- 40 °C
75
125 °C
0.75
0.25
0.1
0.5
1
0
100
0
°
SOT-23
TO-92
25
Figure 7. Power Dissipation
Ambient Temperature
Power Dissipation vs
vs Ambient Temperature
125
1
(continued)
TEMPERATURE ( C)
50
3
SOT-223
75
100
o
16
12
1.6
1.2
0.8
0.4
8
4
0
0.1
0.001
2
0
Figure 6. Input and Output Capacitance
Input and Output Capacitance
125
Figure 4. Base-Emitter On Voltage
Base Emitter ON Voltage vs
vs Reverse Bias Voltage
- 40 °C
vs Reverse Bias Voltage
I - COLLECTOR CURRENT (A)
150
C
Collector Current
vs Collector Current
REVERSE VOLTAGE (V)
0.01
1
25 °C
10
0.1
V
C
f = 1.0 MHz
CE
ib
= 5V
125 °C
C
www.fairchildsemi.com
ob
100
1