MMBTA55 Fairchild Semiconductor, MMBTA55 Datasheet - Page 2

• Manufacturer Part Number: MMBTA55
• Description: TRANSISTOR PNP GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA55

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA55FS

h
V
V
f
V
V
V
I
I
Symbol
CEO
CBO
T
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
*
on
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
£
Parameter
m
£
I
I
I
V
V
I
I
I
I
I
f = 100 MHz
C
C
E
C
C
C
C
C
CE
CB
= 100 µA, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 100 mA, V
= 1.0 mA, I
= 100 µA, I
= 60 V, I
= 60 V, I
Test Conditions
B
E
C
B
E
CE
B
= 0
= 0
CE
CE
CE
= 0
= 0
= 0
= 10 mA
= 1.0 V
= 1.0 V
= 1.0 V
= 1.0 V,
Min
100
100
4.0
60
60
50
Max
0.25
0.1
0.1
1.2
Units
MHz
µA
µA
V
V
V
V
V