MMBTA14 Fairchild Semiconductor, MMBTA14 Datasheet - Page 3

• Manufacturer Part Number: MMBTA14
• Description: TRANSISTOR NPN GEN PURP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA14

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA14FS

Typical Characteristics
0.01
20
10
100
0.1
5
2
10
0.1
1
25
Input and Output Capacitance
V = 30V
CB
vs Ambient Temperature
Collector-Cutoff Current
T - AMBIE NT TEMP ERATURE ( C)
V
vs Reverse Voltage
A
50
- COLLECTOR VOLTAGE(V)
1
75
0.75
0.25
0.5
1
0
0
10
SOT-23
(continued)
TO-92
100
Cib
f = 1.0 MHz
25
°
Ambient Temperature
Power Dissipation vs
Cob
TEMPERATURE ( C)
50
125
100
SOT-223
75
100
o
62.5
61.5
60.5
59.5
62
61
60
500
400
300
200
100
0.1
0
Collector-Emitter Breakdown
1
V
125
ce
Voltage with Resistance
Gain Bandwidth Product
Between Emitter-Base
= 5V
NPN Darlington Transistor
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
150
1
RESISTANCE (k )
10
10
20
100
50
(continued)
100 150
1000