MMBTA14 Fairchild Semiconductor, MMBTA14 Datasheet - Page 3
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MMBTA14
Manufacturer Part Number
MMBTA14
Description
TRANSISTOR NPN GEN PURP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSA14.pdf
(14 pages)
Specifications of MMBTA14
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1.2A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
350mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
1.2 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA14FS
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Typical Characteristics
0.01
20
10
100
0.1
5
2
10
0.1
1
25
Input and Output Capacitance
V = 30V
CB
vs Ambient Temperature
Collector-Cutoff Current
T - AMBIE NT TEMP ERATURE ( C)
V
vs Reverse Voltage
A
50
- COLLECTOR VOLTAGE(V)
1
75
0.75
0.25
0.5
1
0
0
10
SOT-23
(continued)
TO-92
100
Cib
f = 1.0 MHz
25
°
Ambient Temperature
Power Dissipation vs
Cob
TEMPERATURE ( C)
50
125
100
SOT-223
75
100
o
62.5
61.5
60.5
59.5
62
61
60
500
400
300
200
100
0.1
0
Collector-Emitter Breakdown
1
V
125
ce
Voltage with Resistance
Gain Bandwidth Product
Between Emitter-Base
= 5V
NPN Darlington Transistor
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
150
1
RESISTANCE (k )
10
10
20
100
50
(continued)
100 150
1000