MMBT4401 Fairchild Semiconductor, MMBT4401 Datasheet - Page 3

• Manufacturer Part Number: MMBT4401
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT4401

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 100
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4401FSTR

Typical Characteristics
500
100
500
400
300
200
100
0.1
0.8
0.6
0.4
10
1
0
1
0.1
25
1
Voltage vs Collector Current
125 °C
Typical Pulsed Current Gain
V
25 °C
Base-Emitter Saturation
CB
0.3
vs Ambient Temperature
Collector-Cutoff Current
- 40 °C
= 10
I
- 40 °C
= 40V
T - AMBIENT TEMPERATURE ( C)
C
vs Collector Current
50
I - COLLECTOR CURRENT (mA)
A
C
- COLLECTOR CURRENT (mA)
1
25 °C
10
75
3
125 °C
10
100
30
100
125
V
100
°
CE
= 5V
300
500
150
0.8
0.6
0.4
0.2
20
16
12
Capacitance vs Reverse Bias Voltage
0.4
0.3
0.2
0.1
8
4
1
0.1
0.1
NPN General Purpose Amplifier
1
Emitter Transition and Output
V
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
= 5V
- 40 °C
I
I
= 10
C
C
REVERSE BIAS VOLTAGE (V)
Collector Current
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
C ob
1
10
1
25 °C
25 °C
C
10
125 °C
te
125 °C
100
f = 1 MHz
- 40 °C
10
(continued)
500
100
25