MMBT2222 Fairchild Semiconductor, MMBT2222 Datasheet - Page 2

• Manufacturer Part Number: MMBT2222
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2222

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width
Thermal Characteristics
* Device mounted on FR-4PCB 1.6”
Small Signal Characteristics
f
C
C
Switching Characteristics
t
t
t
t
P
R
T
d
r
s
f
Symbol
D
obo
ibo
Symbol
JA
Curent Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
300 s, Duty Cycle
Parameter
1.6”
0.06”.
2.0%
Parameter
T
a
(Continued) T
=25 C unless otherwise noted
V
V
V
I
V
I
I
a
C
C
B1
=25 C unless otherwise noted
CB
EB
CC
CC
= 20mA, V
= 150mA, I
= I
= 0.5V, I
= 10V, I
= 30V, V
= 30V, I
B2
= 15mA
Test Condition
E
C
C
CE
BE(OFF)
B1
= 0, f = 1MHz
= 150mA,
= 0, f = 1MHz
= 20V, f = 100MHz
= 15mA
= 0.5V,
Max.
350
357
2.8
Min.
250
Max.
225
8.0
30
10
25
60
mW/ C
Units
mW
C/W
Rev. B, May 2004
Units
pF
pF
ns
ns
ns
ns