MMBT2369 Fairchild Semiconductor, MMBT2369 Datasheet - Page 2

• Manufacturer Part Number: MMBT2369
• Description: TRANSISTOR SWITCH NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2369

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MMBT2369 / PN2369 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Off Characteristics
V
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
C
C
h
Switching Characteristics
t
t
t
s
CBO
on
off
Symbol
FE
fe
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Small -Signal Current Gain
Storage Time
Turn-On Time
Turn-Off Time
Parameter
T
a
= 25°C unless otherwise noted
I
I
I
I
V
V
I
I
I
I
V
V
I
f = 100MHz
I
V
V
I
C
C
C
E
C
C
C
C
C
B1
B2
CB
CB
CB
EB
CC
CC
= 10μA, I
= 10mA, I
= 10μA, V
= 10μA, I
= 10mA, V
= 100mA, V
= 10mA, I
= 10mA, I
= 10mA, V
= I
= 1.5mA
= 20V, I
= 20V, I
= 5.0V, I
= 0.5V, I
= 3.0V, I
= 3.0V, I
B2
2
= I
Test Condition
C
E
C
B
E
E
B
B
BE
C
E
C
C
CE
CE
= 10mA
= 0
= 0
= 0
= 0
= 0, T
= 1.0mA
= 1.0mA
CE
= 0, f = 1.0MHz
= 0, f = 1.0MHz
= 10mA, I
= 10mA, I
= 0
= 1.0V
= 10V, R
= 2.0V
a
= 125°C
B1
B1
G
= 2.0kΩ,
= 3.0mA
= 3.0mA,
Min.
4.5
0.7
5.0
15
40
40
40
20
Max.
0.25
0.85
120
0.4
4.0
5.0
30
13
12
18
www.fairchildsemi.com
Units
μA
μA
pF
pF
ns
ns
ns
V
V
V
V
V
V