BSR15 Fairchild Semiconductor, BSR15 Datasheet

no-image

BSR15

Manufacturer Part Number
BSR15
Description
IC AMP PNP 40V 800MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BSR15

Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
350 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR15
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BSR15
Quantity:
12 000
©2002 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
• Sourced from Process 63.
• See BCW68G for Characteristics.
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
V
V
V
I
T
C
switches requiring collector currents to 500mA.
J
CEO
CBO
EBO
, T
Symbol
ST
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
a
- Continuous
=25 C unless otherwise noted
BSR15
1. Base 2. Emitter 3. Collector
-55 ~ +150
Value
-800
-5.0
3
-40
-60
1
SOT-23
Mark: T7
Units
2
mA
Rev. B1, July 2002
V
V
V
C

Related parts for BSR15

BSR15 Summary of contents

Page 1

... These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. ©2002 Fairchild Semiconductor Corporation BSR15 T =25 C unless otherwise noted a Parameter ...

Page 2

... Rise Time r t Turn-Off Time off t Storage Time s t Fall Time f Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 40mm 40mm ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Test Condition I = -10mA -100 - -50V ...

Page 3

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B1, July 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ ...

Page 5

CROSSVOLT â â â â Rev. I ...

Related keywords