MMBT200 Fairchild Semiconductor, MMBT200 Datasheet - Page 3
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MMBT200
Manufacturer Part Number
MMBT200
Description
TRANSISTOR PNP GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT200.pdf
(12 pages)
Specifications of MMBT200
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 200mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT200
Manufacturer:
NXP
Quantity:
3 271
Part Number:
MMBT200
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
MMBT200A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3