MMBT4403 Fairchild Semiconductor, MMBT4403 Datasheet - Page 2
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MMBT4403
Manufacturer Part Number
MMBT4403
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N4403TFR.pdf
(7 pages)
Specifications of MMBT4403
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
350mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
100
Power Dissipation
350mW
Frequency (max)
200MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Collector-base Voltage
40V
Emitter-base Voltage
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT4403FSTR
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OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
C
h
h
h
h
t
t
t
t
Symbol
BEX
CEX
T
d
r
s
f
FE
ie
re
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
Electrical Characteristics
*
Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
sat
sat
)
)
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
I
B1
B1
CE
CE
CB
BE
CC
CC
= 1.0 mA, I
= 0.1 mA, I
= 0.1 A, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= I
= 15 mA
= 35 V, V
= 35 V, V
= 10 V, I
= 0.5 V, I
= 30 V, I
= 30 V, I
Test Conditions
B2
= 15 mA
C
E
C
C
B
E
C
= 0
EB
BE
CE
CE
B
B
B
B
CE
CE
CE
CE
CE
CE
= 0,
= 150 mA,
= 150 mA
CE
CE
= 0
= 0
= 0,
PNP General Purpose Amplifier
= 15 mA
= 50 mA
= 15 mA*
= 50 mA
= 1.0 V
= 10 V,
= 0.4 V
= 0.4 V
= 1.0 V
= 1.0 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 2.0 V*
= 2.0 V*
Min
0.75
100
100
200
5.0
1.5
0.1
1.0
40
40
30
60
20
60
Max
225
0.75
0.95
300
500
100
0.1
0.1
0.4
1.3
8.5
8.0
30
20
30
15
15
(continued)
Units
x 10
MHz
mhos
ns
k
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4