BCW33 Fairchild Semiconductor, BCW33 Datasheet
BCW33
Manufacturer Part Number
BCW33
Description
TRANSISTOR NPN 32V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW33.pdf
(5 pages)
Specifications of BCW33
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
• Sourced from process 07.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
Device mounted on FR-4PCB 40mm
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
NF
P
R
C
CBO
T
currents to 300mA.
FE
J
CEO
CBO
EBO
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
D
obo
Symbol
Symbol
, T
JA
Symbol
stg
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current (DC)
Operating and Storage Junction Temperature Range
40mm
Parameter
1.5mm
T
A
T
=25 C unless otherwise noted
a
Parameter
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
BCW33
I
I
I
V
V
I
I
I
I
f = 35MHz
V
I
R
B
C
C
C
C
C
C
C
C
CB
CB
CB
W
S
= 2.0mA, I
= 10 A, I
= 10 A, I
= 2.0mA, V
= 10mA, I
= 2.0mA, V
= 2.0mA, V
= 0.2mA, V
= 2.0k , f = 1.0kHz
= 200Hz
= 32V, I
= 32V, I
= 10V, I
Test Condition
B
C
E
E
B
E
B
= 0
= 0
CE
CE
CE
CE
= 0
= 0, T
= 0.5mA
= 0, f = 1.0MHz
= 0
= 5.0V
= 5.0V
= 5.0V
= 5.0V
A
= 100 C
-55 ~ +150
1. Base 2. Emitter 3. Collector
Value
500
5.0
32
32
0.55
Min.
420
200
5.0
32
32
3
Max.
350
357
2.8
Typ.
1
Max.
0.25
100
800
0.7
4.0
10
10
SOT-23
Mark: D3
mW/ C
Rev. A, August 2002
Units
2
Units
mW
C/W
mA
V
V
V
C
Units
nA
pF
dB
V
V
V
V
V
A
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BCW33 Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance obo NF Noise Figure Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA Device mounted on FR-4PCB 40mm 40mm ©2002 Fairchild Semiconductor Corporation BCW33 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = 2.0mA ...
Page 2
... Figure 3. Base-Emitter Saturation Voltage vs Collector Current 60V 100 T - AMBIENT TEMPERATURE ( C) A Figure 5. Collector-Cutoff Current vs Ambient Temperature ©2002 Fairchild Semiconductor Corporation 0.4 Vce = 0.3 0.2 0.1 200 300 500 1 Figure 2. Collector-Emitter Saturation Voltage 캜 캜 캜 캜 0.8 0.6 125 캜 캜 캜 캜 ...
Page 3
... IB1 = IB2 = 150 cc 120 COLLECTOR CURRENT (mA) C Figure 7. Switching Times vs Collector Current ©2002 Fairchild Semiconductor Corporation (Continued) 350 t s 300 250 200 150 100 50 0 100 200 300 0 Figure 8. Power Dissipation vs SOT- 100 125 150 o TEMPERATURE ( C) Ambient Temperature ...
Page 4
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, August 2002 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...