BCW89 Fairchild Semiconductor, BCW89 Datasheet
BCW89
Manufacturer Part Number
BCW89
Description
TRANSISTOR PNP 60V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW89.pdf
(3 pages)
Specifications of BCW89
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 5V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCW89215
Manufacturer:
NXP Semiconductors
Quantity:
48 000
©2003 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
• Sourced from process 68.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
NF
P
R
C
CBO
and switches requiring collector currents to 300mA.
FE
J
Symbol
CEO
CES
EBO
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
BE(on)
D
Symbol
, T
JA
Symbol
stg
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Noise Figure
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
Parameter
C
=25 C unless otherwise noted
BCW89
- Continuous
I
I
I
I
V
V
V
I
V
V
R
B
C
C
C
C
C
CB
CB
CE
CE
CE
S
W
= -10 A, I
= -2.0mA, I
= -10 A, I
= -10 A, I
= -10mA, I
= 2.0k , f = 1.0kHz
= 200Hz
= -20V, I
= -20V, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
Test Condition
E
E
C
E
E
B
B
C
C
C
= 0
= 0
= 0
= 0
= 0, T
= -0.5mA
= 0
= -2.0mA
= -2.0mA
= -200 A
A
= +100 C
1. Base 2. Emitter 3. Collector
-55 ~ +150
3
Value
-500
-5.0
-60
-60
Min.
-5.0
-0.6
120
-80
-60
-60
Max.
350
357
2.8
1
-0.75
Max.
-100
260
-0.3
-10
10
SOT-23
Mark: H3
mW/ C
2
Units
mW
Units
C/W
Rev. A, May 2003
mA
V
V
V
Units
C
nA
dB
V
V
V
V
V
V
A
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BCW89 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter On Voltage BE(on) Small Signal Characteristics NF Noise Figure Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation BCW89 T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition -2.0mA ...
Page 2
... Package Dimensions ©2003 Fairchild Semiconductor Corporation SOT-23 Dimensions in Millimeters Rev. A, May 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...