©2003 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
• Sourced from process 68.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
V
I
T
Off Characteristics
V
V
V
V
I
On Characteristics
h
V
V
Small Signal Characteristics
NF
P
R
C
CBO
and switches requiring collector currents to 300mA.
FE
J
Symbol
CEO
CES
EBO
(BR)CBO
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
BE(on)
D
Symbol
, T
JA
Symbol
stg
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Noise Figure
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Parameter
T
A
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
Parameter
C
=25 C unless otherwise noted
BCW89
- Continuous
I
I
I
I
V
V
V
I
V
V
R
B
C
C
C
C
C
CB
CB
CE
CE
CE
S
W
= -10 A, I
= -2.0mA, I
= -10 A, I
= -10 A, I
= -10mA, I
= 2.0k , f = 1.0kHz
= 200Hz
= -20V, I
= -20V, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
Test Condition
E
E
C
E
E
B
B
C
C
C
= 0
= 0
= 0
= 0
= 0, T
= -0.5mA
= 0
= -2.0mA
= -2.0mA
= -200 A
A
= +100 C
1. Base 2. Emitter 3. Collector
-55 ~ +150
3
Value
-500
-5.0
-60
-60
Min.
-5.0
-0.6
120
-80
-60
-60
Max.
350
357
2.8
1
-0.75
Max.
-100
260
-0.3
-10
10
SOT-23
Mark: H3
mW/ C
2
Units
mW
Units
C/W
Rev. A, May 2003
mA
V
V
V
Units
C
nA
dB
V
V
V
V
V
V
A