BSR13 Fairchild Semiconductor, BSR13 Datasheet
BSR13
Manufacturer Part Number
BSR13
Description
IC AMP NPN 30V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSR13.pdf
(4 pages)
Specifications of BSR13
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR13
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• Sourced from process 10.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
CBO
EBO
T
Symbol
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
, T
Symbol
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
Curent Gain Bandwidth Product
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
a
=25 C unless otherwise noted
Parameter
T
- Continuous
a
=25 C unless otherwise noted
BSR13
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
= 10 A, I
= 10mA, I
= 10 A, I
= 0.1mA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 3.0V, I
= 50V, I
= 50V, I
Test Condition
C
E
B
E
E
C
CE
CE
= 0
= 0
B
B
B
B
CE
CE
= 0
= 0
= 0, T
CE
CE
CE
= 0
= 15V
= 50V
= 15V
= 50V
= 10V
= 20V, f = 100MHz
= 10V
= 10V
= 10V *
= 1.0V *
= 10V *
a
= 150 C
-55 ~ 150
Ratings
C
5.0
0.5
30
60
Min.
100
250
5.0
30
60
35
50
75
50
30
B
Max.
300
0.4
1.6
1.3
2.6
30
10
15
SOT-23
Mark: U7
Rev. A, September 2004
Units
E
V
V
A
V
C
Units
nA
nA
V
V
V
V
V
A
Related parts for BSR13
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BSR13 Summary of contents
Page 1
... FE V Collector-Emitter Saturation Voltage * CE(sat) V Base-Emitter Saturation Voltage BE(sat) Small Signal Characteristics f Curent Gain Bandwidth Product T * Pulse Test: Pulse Width 300 s, Duty Cycle ©2004 Fairchild Semiconductor Corporation BSR13 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = 10mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4PCB 1.6” 1.6” 0.06”. ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter Max. Units 350 mW 2.8 mW/ C 357 C/W Rev. A, September 2004 ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, September 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...