BCV72 Fairchild Semiconductor, BCV72 Datasheet
BCV72
Manufacturer Part Number
BCV72
Description
TRANSISTOR NPN 60V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCV72.pdf
(3 pages)
Specifications of BCV72
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
500 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCV72
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
• Sourced from process 10.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
Device mounted on FR-4PCB 40mm
V
V
V
I
T
Off Characteristics
V
V
V
I
On Characteristics
h
V
V
P
R
C
CBO
currents to 300mA.
FE
J
CEO
CBO
EBO
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
D
Symbol
Symbol
, T
JA
Symbol
stg
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current (DC)
Operating and Storage Junction Temperature Range
40mm
Parameter
1.5mm
T
a
T
=25 C unless otherwise noted
a
Parameter
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
BCV72
I
I
I
V
V
I
I
I
C
C
E
C
C
C
CB
CB
= 10 A, I
= 2mA, I
= 10 A, I
= 2.0mA, V
= 10mA, I
= 2.0mA, V
= 20V, I
= 20V, I
Test Condition
B
C
E
E
E
B
= 0
= 0
= 0
CE
CE
= 0
= 0, T
= 0.5mA
= 5.0V
= 5.0V
a
= 100 C
-55 ~ +150
1. Base 2. Emitter 3. Collector
Value
500
5.0
60
80
3
0.55
Min.
200
5.0
80
60
Max.
350
357
2.8
1
Max.
0.25
100
450
0.7
10
SOT-23
Mark: K8
mW/ C
Units
2
Units
mW
C/W
Rev. A, April 2004
mA
V
V
V
C
Units
nA
V
V
V
V
V
A
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BCV72 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter On Voltage BE(on) Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA Device mounted on FR-4PCB 40mm 40mm ©2004 Fairchild Semiconductor Corporation BCV72 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition 2mA ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, April 2004 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...