MMBT3906 Fairchild Semiconductor, MMBT3906 Datasheet
MMBT3906
Manufacturer Part Number
MMBT3906
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N3906TFR.pdf
(6 pages)
Specifications of MMBT3906
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3906FSTR
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2010 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
D
C
CEO
CBO
EBO
J
JC
JA
Thermal Characteristics
*
**
, T
PNP General Purpose Amplifier
C
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 A to 100 mA.
Absolute Maximum Ratings*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
B
stg
E
2N3906
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
MMBT3906
A
= 25°C unless otherwise noted
SOT-23
Mark: 2A
C
T
A
= 25°C unless otherwise noted
B
2N3906
83.3
625
200
5.0
E
*MMBT3906
2
.
Max
350
357
2.8
-55 to +150
Value
PZT3906
SOT-223
-200
-5.0
-40
-40
C
**PZT3906
2N3906/MMBT3906/PZT3906, Rev A1
1,000
125
8.0
B
Units
C
mA
C
V
V
V
mW/ C
Units
E
mW
C/W
C/W
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Datasheet:
MMBT3906 Summary of contents
Page 1
... SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3906 625 5.0 83.3 200 PZT3906 SOT-223 Value Units -40 V -40 V -5.0 V -200 mA -55 to +150 C Max Units *MMBT3906 **PZT3906 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3906/MMBT3906/PZT3906, Rev A1 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...
Page 3
Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...
Page 4
Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...
Page 5
Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...