2N6517TA Fairchild Semiconductor, 2N6517TA Datasheet - Page 4
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2N6517TA
Manufacturer Part Number
2N6517TA
Description
TRANSISTOR NPN 350V 500MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N6517BU.pdf
(6 pages)
Specifications of 2N6517TA
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
350V
Vce Saturation (max) @ Ib, Ic
1V @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 10V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6517TA
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
Typical Performance Characteristics
Figure 9. Current Gain Bandwidth Product
10000
100
1000
10
100
2.0
1.8
1.6
1.4
1.2
1.0
1
10
1
10
Figure 11. Resistive Load Switching
0
V
I
t
t
C
Figure 7. Output Capacitance
OFF
stg
t
CC
=5I
f
=100V
B1
V
=-5I
CB
I
20
C
I
C
[V], COLLECTOR-BASE VOLTAGE
[mA], COLLECTOR CURRENT
B2
[mA], COLLECTOR CURRENT
, Ta=25
o
40
C
10
60
80
f = 1MHz
100
100
100
(Continued)
4
1000
100
50
45
40
35
30
25
20
10
1.0
10
Figure 10. Resistive Load Switching
t
t
t
V
I
ON
r
d
C
CC
=5I
Figure 8. Input Capacitance
1.5
=100V
B1
=-5I
V
EB
I
C
2.0
B2
[V], EMITTER-BASE VOLTAGE
[mA], COLLECTOR CURRENT
, Ta=25
2.5
o
C
3.0
3.5
4.0
f = 1MHz
www.fairchildsemi.com
4.5
5.0
100