2N6517CTA-NL Fairchild Semiconductor, 2N6517CTA-NL Datasheet
2N6517CTA-NL
Manufacturer Part Number
2N6517CTA-NL
Description
2n6517 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N6517CTA-NL.pdf
(3 pages)
©2002 Fairchild Semiconductor Corporation
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
Refer to 2N6515 for graphs
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
C
f
C
CBO
EBO
T
V
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
BE
CEO
CBO
EBO
Symbol
(sat)
(sat)
(on)
* Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
* Current Gain Bandwidth Product
Base Emitter On Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
(max)=625mW
Parameter
CEO
=350V
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
2N6517
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
I
f=20MHz
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
=10 A, I
=1mA, I
=100 A, I
=1mA, V
=10mA, V
=30mA, V
=50mA, V
=100mA, V
=10mA, I
=20mA, I
=30mA, I
=50mA, I
=10mA, I
=20mA, I
=30mA, I
=10mA, V
=100mA, V
=5V, I
=250V, I
=20V, I
Test Condition
B
C
C
CE
=0
=0
B
B
B
B
B
B
B
E
=0
E
CE
CE
CE
CE
=1mA
=2mA
=3mA
=5mA
=1mA
=2mA
=3mA
=0, f=1MHz
E
=0
=10V
CE
CE
=0
=10V
=10V
=10V
=20V,
=10V
=10V
1. Emitter 2. Base 3. Collector
1
Min.
350
350
20
30
30
20
15
40
6
-55 ~ 150
Value
350
350
500
625
150
6
Typ.
TO-92
Max.
0.35
0.75
0.85
200
200
200
0.3
0.5
0.9
50
50
1
6
2
Rev. A2, August 2002
Units
mW
mA
V
V
V
C
C
Units
MHz
nA
nA
pF
V
V
V
V
V
V
V
V
V
V
V
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2N6517CTA-NL Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE C Output Capacitance Current Gain Bandwidth Product T V (on) Base Emitter On Voltage BE * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation 2N6517 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =1mA ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...