MMBT2907A_D87Z Fairchild Semiconductor, MMBT2907A_D87Z Datasheet - Page 5

• Manufacturer Part Number: MMBT2907A_D87Z
• Description: TRANS GP PNP 60V 800MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT2907A_D87Z

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Common Emitter Characteristics
0.5
0.2
0.1
5
2
1
_
1
Common Emitter Characteristics
_
2
I - COLLECTOR CURRENT (mA)
C
_
5
_
10
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
1
-40
Common Emitter Characteristics
V
h
h
I = -10mA
h
C
oe
CE
ie
h
re
_
fe
20
= -10 V
V
T = 25 C
-20
CE
A
h
T - AMBIENT TEMPERATURE ( C)
oe
= -10 V
A
o
h
h
0
h
fe
ie
re
_
50
20
40
1.3
1.2
1.1
0.9
0.8
h
h
h
h
oe
fe
ie
re
1
(f = 1.0kHz)
-4
Common Emitter Characteristics
60
PNP General Purpose Amplifier
h
ie
o
80
h
h
re
fe
V
and h
CE
-8
- COLLECTOR VOLTAGE (V)
100
oe
-12
h
h
h
h
re
oe
ie
fe
-16
T = 25 C
I = -10mA
C
A
(continued)
o
-20