MMBT2907-NL Fairchild Semiconductor, MMBT2907-NL Datasheet

MMBT2907-NL

Manufacturer Part Number

MMBT2907-NL

Description

Pn2907/mmbt2907 Pnp General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBT2907-NL.pdf (3 pages)

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1997 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 500 mA. Sourced

from Process 63. See PN2907A for characteristics.

Absolute Maximum Ratings*

, T

PNP General Purpose Amplifier

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

stg

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

PN2907

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

MMBT2907

SOT-23

Mark: 2B

PN2907

83.3

625

200

5.0

Discrete POWER & Signal

Max

-55 to +150

Value

*MMBT2907

800

5.0

Technologies

350

357

2.8

Units

mW/ C

Units

C/W

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MMBT2907-NL Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation MMBT2907 TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted PN2907 625 83.3 200 Discrete POWER & Signal Technologies Value Units 5.0 V 800 mA -55 to +150 C Max Units *MMBT2907 350 mW 5.0 2.8 mW/ C C/W 357 C/W ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Base Cutoff Current B I Collector Cutoff Current CBO ON CHARACTERISTICS ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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