MMBT5087 Fairchild Semiconductor, MMBT5087 Datasheet - Page 2
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MMBT5087
Manufacturer Part Number
MMBT5087
Description
TRANSISTOR GP PNP AMP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5087.pdf
(9 pages)
Specifications of MMBT5087
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (max)
10nA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
40MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
- 3 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
250
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
50V
Collector-base Voltage
50V
Emitter-base Voltage
3V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
250
Frequency (max)
40MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5087TR
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©2003 Fairchild Semiconductor Corporation
Thermal Characteristics
* Device mounted on FR-4 PCB 1.6”
P
R
R
D
Symbol
JC
JA
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6”
0.06."
Parameter
T
a
=25 C unless otherwise noted
2N5086
2N5087
83.3
625
200
5.0
Max.
*MMBT5087
350
357
2.8
Rev. B1, September 2003
mW/ C
Units
mW
C/W
C/W