MMBT3904 Fairchild Semiconductor, MMBT3904 Datasheet - Page 3

• Manufacturer Part Number: MMBT3904
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT3904

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904FSTR

Typical Characteristics
500
100
0.1
500
400
300
200
100
10
0.8
0.6
0.4
1
0
25
1
0.1
0.1
Voltage vs Collector Current
Typical Pulsed Current Gain
V
CB
- 40 °C
vs Ambient Temperature
Base-Emitter Saturation
Collector-Cutoff Current
= 30V
- 40 °C
I
T - AMBIENT TEMPERATURE ( C)
I
vs Collector Current
= 10
50
C
125 °C
A
C
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
25 °C
1
1
75
25 °C
125 °C
100
10
10
V
125
°
CE
= 5V
100
100
150
0.15
0.05
0.8
0.6
0.4
0.2
10
0.1
5
4
3
2
1
1
0.1
0.1
0.1
NPN General Purpose Amplifier
V
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
= 5V
- 40 °C
I
Reverse Bias Voltage
I
= 10
C
C
REVERSE BIAS VOLTAGE (V)
Collector Current
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
Capacitance vs
1
1
1
25 °C
25 °C
C ibo
10
125 °C
10
10
125 °C
f = 1.0 MHz
- 40 °C
C obo
(continued)
100
100
100