FJAF4310YTU Fairchild Semiconductor, FJAF4310YTU Datasheet

TRANSISTOR NPN 140V 10A TO-3PF

FJAF4310YTU

Manufacturer Part Number
FJAF4310YTU
Description
TRANSISTOR NPN 140V 10A TO-3PF
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJAF4310YTU

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
500mV @ 500mA, 5A
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 3A, 4V
Power - Max
80W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJAF4310YTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
FJAF4310 Rev. B0
© 2009 Fairchild Semiconductor Corporation
FJAF4310
NPN Epitaxial Silicon Transistor
Features
• Audio Power Amplifier
• High Current Capability : I
• High Power Dissipation
• Wide S.O.A
• Complement to FJAF4210
Absolute Maximum Ratings*
Electrical Characteristics
* Pulse Test : PW=20μs
h
FE
Symbol
Symbol
V
BV
BV
BV
CE
V
V
V
T
R
I
I
Classification
h
C
CBO
EBO
P
CBO
CEO
STG
EBO
T
I
I
θJC
f
CBO
CEO
FE
C
EBO
B
(sat)
ob
T
C
J
Classification
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
Junction to Case
Junction Temperature
Storage Temperature
* DC Current Gain
FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage I
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
C
Parameter
=10A
T
A
C
=25°C unless otherwise noted
=25°C)
Parameter
T
A
50 ~ 100
=25°C unless otherwise noted
R
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CB
CE
=5mA, I
=50mA, R
=5mA, I
=5A, I
Test Condition
1
=6V, I
=200V, I
=4V, I
=10V, f=1MHz
=5V, I
B
=0.5A
C
C
E
C
C
=0
=0
=0
=3A
=1A
BE
E
=0
=∞
70 ~ 140
O
1
Min.
1.Base 2.Collector 3.Emitter
200
140
50
6
- 55 ~ 150
Value
1.48
200
140
150
1.5
80
10
Typ.
6
250
30
90 ~ 180
Max.
TO-3PF
180
0.5
10
10
Y
www.fairchildsemi.com
October 2009
Units
°C/W
°C
°C
W
V
V
V
A
A
Units
MHz
μA
μA
pF
V
V
V
V

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FJAF4310YTU Summary of contents

Page 1

... FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T * Pulse Test : PW=20μs h Classification FE Classification h FE © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev =25°C unless otherwise noted A Parameter =25° =25°C unless otherwise noted A Test Condition I =5mA =50mA, R =∞ ...

Page 2

... C 0.0 0.0 0.4 0.8 I [A], BASE CURRENT B Figure 3. V (sat) vs 125 C 0 0.0 0.5 V [V], Base-Emitter On VOLTAGE BE Figure 5. Base-Emitter On Voltage © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev 250mA B 1000 I = 200mA 150mA 100mA B 100 I = 50mA 20mA 0 10A C 1.2 1.6 2.0 0.01 Characteristics Figure 4 ...

Page 3

... Typical Perpormance Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 (Continued) 100 125 150 175 3 www.fairchildsemi.com ...

Page 4

... Physical Dimension 2.00 ±0.20 ±0.20 2.00 4.00 ±0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ±0.30 © 2009 Fairchild Semiconductor Corporation FJAF4310 Rev. B0 TO-3PF ±0.20 15.50 ø3.60 ±0.20 0.85 2.00 ±0.20 5.45TYP ] [5.45 ±0. ±0.20 5.50 ±0.20 3.00 (1.50) ±0.03 ±0.20 2.00 ±0.20 3 ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower FPS Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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