D45H11 Fairchild Semiconductor, D45H11 Datasheet
D45H11
Manufacturer Part Number
D45H11
Description
TRANSISTOR PNP 80V 8A TO-220
Manufacturer
Fairchild Semiconductor
Specifications of D45H11
Transistor Type
PNP
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
60mW
Frequency - Transition
40MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 16 A
Maximum Dc Collector Current
10 A
Power Dissipation
20 W
Maximum Operating Frequency
40 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D45H11
Manufacturer:
FUJITSU
Quantity:
31
Part Number:
D45H11
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
D45H11G
Manufacturer:
ON Semiconductor
Quantity:
19
Part Number:
D45H11G
Manufacturer:
ON/安森美
Quantity:
20 000
© 2007 Fairchild Semiconductor Corporation
D45H11 Rev. 1.0.0
D45H11
PNP Power Amplifier
• This device is designed for power amplifier, regulatro and switching circuits where speed is important.
• Sourced from process 5Q.
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
V
I
T
Off Characteristics
V
I
I
On Characteristics *
h
V
V
V
Small Signal Characteristics
f
P
R
R
C
Symbol
CBO
EBO
T
* Note) Device mounted on FR-$ PCB 36mm*18mm*1.5mm: Mounting pad for the collector lead min. 6cm2.
J
FE
CEO
(BR)CEO
CE (sat)
BE (sat)
BE (on)
D
θJC
θJA
, T
Symbol
Symbol
STG
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector Current
Operating and Storage Junction Temperature Range
Derate above 25°C
Parameter
T
Parameter
a
T
- Continuous
=25°C unless otherwise noted
a
=25°C unless otherwise noted
Parameter
1. Base 2. Collector 3. Emitter
1
I
V
V
V
V
I
I
V
I
C
C
C
C
CB
EB
CE
CE
CE
= -100mA, I
= -8A,I
= -8A,I
= -500mA, V
TO-220
= -5V, I
1
= -80V, I
= -1V, I
= -1V, I
= -2V, I
Test Condition
B
B
= -0.4A
= -0.8A
C
C
C
C
E
= 0
= -2A
= -4A
= -10mA
B
= 0
CE
= 0
= -10V
Mark: D45H11
Max.
62.5
480
2.1
60
-55 to +150
Value
-80
-10
Min.
-0.54
-80
60
40
40
Max.
-0.65
-100
-1.0
-1.5
-10
mW/°C
Units
°C/W
°C/W
mW
www.fairchildsemi.com
October 2008
Units
°C
V
A
Units
MHZ
μA
μA
V
V
V
V
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D45H11 Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA * Note) Device mounted on FR-$ PCB 36mm*18mm*1.5mm: Mounting pad for the collector lead min. 6cm2. © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.0.0 TO-220 1 1. Base 2. Collector 3. Emitter Parameter - Continuous T =25°C unless otherwise noted ...
Page 2
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...