FJPF5027RTU Fairchild Semiconductor, FJPF5027RTU Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single FJPF5027RTU
Manufacturer Part Number
FJPF5027RTU
Description
TRANSISTOR NPN 800V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Specifications of FJPF5027RTU
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
800V
Vce Saturation (max) @ Ib, Ic
2V @ 300mA, 1.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 200mA, 5V
Power - Max
40W
Frequency - Transition
15MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
©2003 Fairchild Semiconductor Corporation
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
V
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
h
V
V
C
f
t
t
t
FE
B
C
CP
CBO
EBO
T
ON
STG
F
FE1
FE2
J
STG
CEX
CBO
CEO
EBO
C
CE
BE
Symbol
ob
Symbol
CBO
CEO
EBO
(sat)
(sat)
Classification
(sus)
Classification
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( T
Junction Temperature
Storage Temperature
FE1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
T
C
C
=25 C)
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
10 ~ 20
FJPF5027
N
I
V
I
I
I
L = 2mH, Clamped
V
V
V
V
I
I
V
V
R
C
C
C
E
C
C
I
C
CB
CB
EB
CE
CE
CE
CC
L
= 1.5A, I
= 1mA, I
= 1mA, I
= 5mA, I
= 1.5A, I
= 1.5A, I
= 5I
= 200
= 10V, I
= 800V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Condition
= 400V
B1
B1
= -2.5I
E
B
C
C
C
C
B
B
E
C
= -I
= 0
= 0
= 0
= 0
= 0.3A
= 0.3A
= 0, f = 1MHz
= 0.2A
= 1A
E
= 0.2A
= 0
B2
B2
15 ~ 30
= 0.3A
= 2A
R
1
1.Base
1100
Min.
800
800
10
8
- 55 ~ 150
7
2.Collector
Value
1100
800
150
1.5
10
40
7
3
TO-220F
Typ.
60
15
20 ~ 40
Max.
3.Emitter
1.5
0.5
0.3
O
10
10
40
2
3
Rev. A, December 2003
Units
W
Units
V
V
A
A
V
A
MHz
C
C
pF
V
V
V
V
V
V
A
A
s
s
s
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FJPF5027RTU Summary of contents
... Base-Emitter Saturation Voltage BE C Output Capacitance ob f Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2003 Fairchild Semiconductor Corporation FJPF5027 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA 5mA ...
... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 100 0.1 0.01 0 [A], COLLECTOR CURRENT C Figure 3. Saturation Voltage 10 I =3A L=1mH, V =20V 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Reverse Bias Safe Operating Area ©2003 Fairchild Semiconductor Corporation 100 350mA 150mA 100mA 50mA 0. 125 ...
... Typical Characteristics 10 1 0.1 I =45mA, I =-0. =125V CC 0.01 0 [A], COLLECTOR CURRENT C Figure 7. Resistive Load Switching Characteristics ©2003 Fairchild Semiconductor Corporation (Continued Figure 8. Power Derating 50 75 100 125 150 175 C], CASE TEMPERATURE C Rev. A, December 2003 ...
... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2003 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, December 2003 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...
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