FJE3303H1TU Fairchild Semiconductor, FJE3303H1TU Datasheet - Page 3

• Manufacturer Part Number: FJE3303H1TU
• Description: TRANSISTOR PWR NPN FAST HV TO126
• Manufacturer: Fairchild Semiconductor

Specifications of FJE3303H1TU

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 500mA, 1.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 500mA, 2V
• Power - Max: 20W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 4 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

FJE3303 Rev. B
Typical Performance Characteristics
Figure 3. Collector-Emitter Saturation Voltage
Figure 5. Resistive Load Switching Time
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.01
10
0.1
1
0.01
10
1
0
0.1
Figure 1. Static Characteristic
I
C
= 4 I
I
V
1
B1
CC
V
= - I
CE
= 125V
B
[V], COLLECTOR-EMITTER VOLTAGE
2
B2
I
= 0.2A
C
I
C
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
3
0.1
t
F
4
5
t
STG
Ta = 125
6
1
I
B
7
1
= 120 mA
I
o
B
I
C
Ta = - 25
B
= 40 mA
= 20 mA
Ta = 75
Ta = 25
8
o
C
9
o
o
C
C
10
10
3
Figure 4. Base-Emitter Saturation Voltage
Figure 6. Resistive Load Switching Time
0.1
10
100
0.01
1
10
0.01
0.1
10
1
1E-3
1
0.1
Ta = - 25
Ta = 125
Ta = 125
I
Ta = - 25
V
C
Figure 2. DC Current Gain
CE
= 4 I
I
V
B1
CC
= 2V
= 120mA, I
= 310V
o
o
B
C
C
o
o
C
C
I
Ta = 25
C
I
Ta = 75
I
C
[A], COLLECTOR CURRENT
C
0.01
Ta = 75
Ta = 25
[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
0.1
B2
o
= - 40mA
o
C
C
o
o
C
C
t
STG
t
F
0.1
1
1
1
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