FJE3303H1TU Fairchild Semiconductor, FJE3303H1TU Datasheet

TRANSISTOR PWR NPN FAST HV TO126

FJE3303H1TU

Manufacturer Part Number
FJE3303H1TU
Description
TRANSISTOR PWR NPN FAST HV TO126
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJE3303H1TU

Transistor Type
NPN
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 500mA, 1.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 500mA, 2V
Power - Max
20W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
1.5 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
4 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJE3303H1TU
Manufacturer:
Fairchi/ON
Quantity:
437 760
©2005 Fairchild Semiconductor Corporation
FJE3303 Rev. B
FJE3303
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Regulator
Absolute Maximum Ratings
* Pulse Test: Pulse Width = 5ms, Duty Cycle
V
V
V
I
I
I
I
P
T
T
C
CP
B
BP
J
STG
CBO
CEO
EBO
C
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current (DC)
Base Current (Pulse) *
Collector Dissipation (T
Junction Temperature
Storage Temperature
10%
Parameter
C
= 25 C)
T
C
= 25°C unless otherwise noted
1. Emitter
1
2.Collector
1
TO-126
3.Base
-65 ~ 150
Value
0.75
700
400
150
1.5
1.5
20
9
3
Units
www.fairchildsemi.com
W
V
V
V
A
A
A
A
C
C

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FJE3303H1TU Summary of contents

Page 1

... CP I Base Current (DC Base Current (Pulse Collector Dissipation ( Junction Temperature J T Storage Temperature STG * Pulse Test: Pulse Width = 5ms, Duty Cycle 10% ©2005 Fairchild Semiconductor Corporation FJE3303 Rev. B TO-126 1 1. Emitter 2.Collector 3.Base T = 25°C unless otherwise noted C Parameter = Value Units 700 V ...

Page 2

Electrical Characteristics Symbol Parameter BV Collector-Base Breakdwon Voltage CBO BV Collector-Emitter Breakdown Voltage CEO BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain * FE1 h FE2 V Collector-Emitter Saturation ...

Page 3

Typical Performance Characteristics Figure 1. Static Characteristic 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Collector-Emitter Saturation Voltage ...

Page 4

Typical Performance Characteristics Figure 7. Forward Biased Safe Operating Area 10 I (Pulse) 1ms C 5ms I (DC 0 Single Pulse 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Power ...

Page 5

Mechanical Dimensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] FJE3303 Rev. B TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 5 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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