PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet - Page 7

• Manufacturer Part Number: PBSS5160T,215
• Description: TRANS PNP 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4347-2; 934057668215; PBSS5160T T/R; PBSS5160T T/R

NXP Semiconductors
handbook, halfpage
60 V, 1 A
PNP low V
T
(1) I
(2) I
(3) I
(4) I
Fig.10 Collector current as a function of
amb
(A)
1.6
1.2
0.8
0.4
I C
B
B
B
B
= 25 C.
2
0
= 40 mA.
= 36 mA.
= 32 mA.
= 28 mA.
0
collector-emitter voltage; typical values.
1
CEsat
(6)
(5) I
(6) I
(7) I
(8) I
(5)
B
B
B
B
2
(BISS) transistor
(4)
= 24 mA.
= 20 mA.
= 16 mA.
= 12 mA.
(3)
3
(2)
(10)
(1)
(7)
(8)
(9)
(9) I
(10) I
4
V CE (V)
B
B
MLE125
= 8 mA.
= 4 mA.
5
Rev. 03 - 18 July 2008
handbook, halfpage
R CEsat
I
(1) T
Fig.11 Equivalent on-resistance as a function of
C
/I
( )
B
10
10
10
= 20.
10
amb
1
3
2
1
10
= 100 C.
collector current; typical values.
1
1
(2) T
10
amb
(2)
= 25 C.
10
(1)
(3)
2
PBSS5160T
Product specification
(3) T
10
3
I C (mA)
MLE121
amb
7 of 10
= 55 C.
10
4