PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet - Page 2

• Manufacturer Part Number: PBSS5160T,215
• Description: TRANS PNP 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4347-2; 934057668215; PBSS5160T T/R; PBSS5160T T/R

NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
NPN complement: PBSS4160T.
MARKING
Note
1. * = p: made in Hong Kong
ORDERING INFORMATION
PBSS5160T
PBSS5160T
TYPE NUMBER
Low collector-emitter saturation voltage V
High collector current capability: I
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power
transistors BCP52 and BCX52.
Major application segments:
– Automotive
– Telecom infrastructure
– Industrial.
Power management:
– DC-to-DC conversion
– Supply line switching.
Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
60 V, 1 A
PNP low V
* = t: made in Malaysia
* = W: made in China.
and LEDs)
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
NAME
(BISS) transistor
*U6
MARKING CODE
C
and I
plastic surface mounted package; 3 leads
CM
CEsat
Rev. 03 - 18 July 2008
(1)
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
I
R
1
2
3
SYMBOL
C
CM
CEO
CEsat
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
1
PARAMETER
3
base
emitter
collector
2
MAM256
Product specification
DESCRIPTION
PBSS5160T
1
330
MAX.
60
1
2
VERSION
SOT23
2 of 10
3
2
V
A
A
m
UNIT