PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet - Page 3

• Manufacturer Part Number: PBSS5160T,215
• Description: TRANS PNP 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4347-2; 934057668215; PBSS5160T T/R; PBSS5160T T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm
3. Operated under pulsed conditions: duty cycle
handbook, halfpage
V
V
V
I
I
I
I
P
T
T
T
SYMBOL
C
CM
B
BM
stg
j
amb
CBO
CEO
EBO
tot
60 V, 1 A
PNP low V
(1) Device mounted with 1 cm
(2) Device mounted on standard footprint.
(mW)
P tot
500
400
300
200
100
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Fig.2 Power derating curves.
40
CEsat
(1)
(2)
PARAMETER
(BISS) transistor
2
collector tab.
80
120
T amb ( C)
MLE128
160
Rev. 03 - 18 July 2008
open emitter
open base
open collector
note 1
note 2
t = 1 ms or limited by T
t
T
p
amb
20 %, pulse width t
note 1
note 2
notes 1 and 3
300 s;
25 C;
CONDITIONS
0.02
p
j(max)
10 ms.
65
65
MIN.
2
collector mounting pad.
270
400
1.25
+150
150
+150
PBSS5160T
Product specification
80
60
5
0.9
1
2
300
1
MAX.
3 of 10
V
V
V
A
A
A
mA
A
mW
mW
W
C
C
C
UNIT