PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet

TRANS PNP 60V 1A SOT23

PBSS5160T,215

Manufacturer Part Number
PBSS5160T,215
Description
TRANS PNP 60V 1A SOT23
Manufacturer
NXP Semiconductors
Datasheets
1.PBSS5160T215.pdf (10 pages)
2.PBSS5160T215.pdf (10 pages)

Specifications of PBSS5160T,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
330mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 500mA, 5V
Power - Max
400mW
Frequency - Transition
220MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 60 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1 A
Maximum Dc Collector Current
- 2 A
Power Dissipation
270 mW
Maximum Operating Frequency
220 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4347-2
934057668215
PBSS5160T T/R
PBSS5160T T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PBSS5160T,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
PBSS5160T
60 V, 1 A PNP low V
Rev. 03 — 18 July 2008
IMPORTANT NOTICE
CEsat
(BISS) transistor
Product data sheet

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PBSS5160T,215 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors PNP low V (BISS) transistor CEsat FEATURES Low collector-emitter saturation voltage V High collector current capability: I High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52. APPLICATIONS Major application segments: – Automotive – ...

Page 3

... NXP Semiconductors PNP low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and ...

Page 5

... NXP Semiconductors PNP low V (BISS) transistor CEsat CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat V base-emitter saturation voltage BEsat R equivalent on-resistance ...

Page 6

... NXP Semiconductors PNP low V (BISS) transistor CEsat 10 handbook, halfpage V CEsat ( (2) ( 100 C. amb ( amb ( amb Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. 10 handbook, halfpage V CEsat ( (1) ( amb ( 100 ( 50 Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. MLE126 ...

Page 7

... NXP Semiconductors PNP low V (BISS) transistor CEsat 2 handbook, halfpage (6) (5) (4) ( (A) 1.6 1.2 0.8 0 amb ( mA mA mA mA Fig.10 Collector current as a function of collector-emitter voltage; typical values. MLE125 handbook, halfpage (2) (1) R CEsat (7) (8) (9) ( (10 mA. B (1) T Fig.11 Equivalent on-resistance as a function of Rev July 2008 Product specifi ...

Page 8

... NXP Semiconductors PNP low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2 ...

Page 9

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 10

... NXP Semiconductors Revision history Revision history Document ID Release date PBSS5160T_N_3 20080718 • Modifications: Marking table on page 2; changed code PBSS5160T_2 20040527 (9397 750 13284) PBSS5160T_1 20030623 (9397 750 11172 PNP low V Data sheet status Change notice Product data sheet - Product specification - Product specifi ...

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