PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet - Page 5

• Manufacturer Part Number: PBSS5160T,215
• Description: TRANS PNP 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4347-2; 934057668215; PBSS5160T T/R; PBSS5160T T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
handbook, halfpage
I
I
I
h
V
V
R
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
60 V, 1 A
PNP low V
CEsat
c
V
(1) T
(2) T
(3) T
Fig.4
CE
h FE
= 25 C unless otherwise specified.
600
400
200
= 5 V.
amb
amb
amb
0
10
= 100 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current; typical values.
1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
collector capacitance
p
1
CEsat
300 s;
PARAMETER
10
(BISS) transistor
0.02.
10
(1)
(2)
(3)
2
10
I C (mA)
3
MLE124
10
4
Rev. 03 - 18 July 2008
V
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
handbook, halfpage
B
B
B
CONDITIONS
= 100 mA; note 1
= 50 mA
= 100 mA; note 1
C
C
C
C
C
V
(1) T
(2) T
(3) T
Fig.5
E
E
E
CE
= 0 A
= 1 mA
= 500 mA; note 1
= 1 A; note 1
= 1 A
BE
CE
B
B
V BE
= 0 A
= 0 A; T
= I
(V)
1.2
= 5 V.
0 8
0 4
= 1 mA
= 50 mA
amb
amb
amb
= 0 V
= 10 V;
0
e
10
= 0 A; f = 1 MHz
= 55 C.
= 25 C.
= 100 C.
Base-emitter voltage as a function of
collector current; typical values.
1
j
= 150 C
1
10
200
150
100
150
MIN.
10
(1)
(2)
(3)
2
350
250
160
220
220
9
TYP.
PBSS5160T
Product specification
110
120
220
0.95
0.82
10
I C (mA)
3
330
15
MAX. UNIT
MLE122
100
50
100
100
160
175
330
1.1
0.9
5 of 10
10
4
nA
nA
nA
mV
mV
mV
V
m
V
MHz
pF
A