KSC5338D Fairchild Semiconductor, KSC5338D Datasheet - Page 5

• Manufacturer Part Number: KSC5338D
• Description: TRANSISTOR NPN 450V 5A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of KSC5338D

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 11MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 11 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
Typical Characteristics
Figure 7. Base-Emitter Saturation Voltage
500
450
400
350
300
250
0.1
10
5
4
3
2
1
1E-3
0.25
0
Figure 11. Induction Storage Time
Figure 9. Forward Recovery Time
I
V
V
L
Bon
T
CC
Z
C
J
= 300V
= 200
= I
= -25
= 15V
0.50
Boff
µ
o
H
C
0.01
5
0.75
I
C
I
F
I
I
[A], COLLECTOR CURRENT
C
C
[A], FORWARD CURRENT
= 2A @ T
= 1A @ T
h
FE
I
C
, FORCED GAIN
1.00
= 1A @ T
T
J
J
J
=125
=125
= +25
10
0.1
o
J
o
1.25
C
=25
C
(Continued)
o
C
o
C
I
C
= 2A @ T
1.50
di/dt = 10A/
T
T
15
C
1
J
= 25
= 125
J
I
=25
C
1.75
o
= 10I
C
o
o
C
C
µ
B
S
2.00
20
10
5
1000
2000
1500
1000
2000
0.01
Figure 8. Collector Output Capacitance
100
500
0.1
10
10
1
Figure 12. Inductive Crossover Time
0
0.2
1
2
I
V
V
L
Bon
C
CC
Z
= 300V
= 200
= I
= 15V
Figure 10. Switching Time
4
Boff
µ
H
6
I
C
[A], COLLECTOR CURRENT
REVERSE VOLTAGE [V]
8
h
FE
I
C
, FORCED GAIN
1
= 1A @ T
10
I
C
t
C
10
STG
= 2A @ T
ib
J
12
=125
o
C
J
I
=125
C
14
= 2A @ T
I
C
V
I
C
o
= 1A @ T
CC
C
= 5I
16
C
t
= 250V
f = 1MHz
F
ob
B1
J
=25
= 2.5I
www.fairchildsemi.com
J
=25
18
o
C
o
C
B2
100
10
20