FJPF13007H2TU Fairchild Semiconductor, FJPF13007H2TU Datasheet

TRANSISTOR NPN 400V 8A TO-220F

FJPF13007H2TU

Manufacturer Part Number
FJPF13007H2TU
Description
TRANSISTOR NPN 400V 8A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJPF13007H2TU

Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 2A, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
26 @ 2A, 5V
Power - Max
40W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
FJPF13007H2TU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 791
Company:
Part Number:
FJPF13007H2TU
Quantity:
4 500
Company:
Part Number:
FJPF13007H2TU
Quantity:
4 500
©2005 Fairchild Semiconductor Corporation
FJPF13007 Rev. C
FJPF13007
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings
V
V
V
I
I
I
P
T
T
C
CP
B
J
STG
CBO
CEO
EBO
C
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
= 25 C)
T
C
= 25°C unless otherwise noted
1
1.Base
2.Collector
TO-220F
1
3.Emitter
-65 ~ 150
Value
700
400
150
16
40
9
8
4
Units
www.fairchildsemi.com
W
V
V
V
A
A
A
C
C

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FJPF13007H2TU Summary of contents

Page 1

... Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current (DC Collector Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG ©2005 Fairchild Semiconductor Corporation FJPF13007 Rev. C TO-220F 1 1.Base 2.Collector 3.Emitter T = 25°C unless otherwise noted C Parameter = Value Units 700 V 400 ...

Page 2

Electrical Characteristics Symbol Parameter BV Collector-Emitter Breakdown Voltage CEO I Emitter Cut-off Current EBO h DC Current Gain FE1 h FE2 V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter Saturation Voltage BE(sat) f Current Gain Bandwidth Product T C Output Capacitance ...

Page 3

Typical Performance Characteristics Figure 1. DC Current Gain 100 [A], COLLECTOR CURRENT C Figure 3. Collector Output Capacitance 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Turn Off Time ...

Page 4

Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE FJPF13007 Rev. C (Continued) Figure 8. Power Derating 60 Vcc=50V, I =1A - ...

Page 5

Mechanical Dimensions MAX1.47 0.80 0.35 2.54TYP [2.54 FJPF13007 Rev. C TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) 0.10 #1 0.10 0.50 2.54TYP ] [2.54 ] 0.20 0.20 9.40 0.20 5 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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