2N4400BU Fairchild Semiconductor, 2N4400BU Datasheet - Page 2

• Manufacturer Part Number: 2N4400BU
• Description: IC TRANS NPN SS GP 600MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N4400BU

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 150mA, 1V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N4400

V
V
V
I
I
ON CHARACTERISTICS*
C
C
h
h
h
h
h
t
t
t
t
OFF CHARACTERISTICS
h
V
V
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Symbol
CEX
BL
d
r
s
f
fe
fe
ie
re
oe
FE
*
(BR)CEO
(BR)CBO
(BR)EBO
ob
ib
CE(
BE(
Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Electrical Characteristics
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Small-Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parameter
TA = 25°C unless otherwise noted
V
V
I
I
I
I
V
V
V
V
I
f = 100 MHz
V
f = 1.0 kHz
V
V
V
V
I
I
I
I
I
B1
C
C
E
C
C
C
C
C
B1
CE
CE
CC
CC
CE
CE
CE
CE
CB
EB
CE
= 1.0 mA, I
= 100 A, I
= 100 A, I
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= I
= 15 mA ,V
= 35 V, V
= 35 V, V
= 0.5 V, f = 140 kHz
= 30 V, I
= 30 V, I
= 1.0 V, I
= 1.0 V, I
= 1.0 V, I
= 2.0 V, I
= 5.0 V, f = 140 kHz
= 10 V, I
Test Conditions
B2
= 15 mA
C
C
C
B
E
C
C
C
C
C
CE
B
B
B
B
EB
EB
= 1.0 mA,
= 150 mA,
= 150 mA
= 0
EB
= 0
= 0
= 1.0 mA
= 10 mA
= 150 mA
= 500 mA
=15 mA
= 50 mA
=15 mA
= 50 mA
= 10 V,
NPN General Purpose Amplifier
= 0.4 V
= 0.4 V
= 2 V
Min
0.75
6.0
2.0
0.5
0.1
1.0
40
60
20
20
40
50
20
Max
0.95
0.40
0.75
225
150
250
0.1
0.1
6.5
7.5
8.0
1.2
15
30
30
20
30
(continued)
Units
x 10
mhos
K
ns
pF
pF
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4