2N4400BU Fairchild Semiconductor, 2N4400BU Datasheet
2N4400BU
Specifications of 2N4400BU
Related parts for 2N4400BU
2N4400BU Summary of contents
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... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 2001 Fairchild Semiconductor Corporation MMBT4400 TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4400 83 Value ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Emitter Cutoff Current BL ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...
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Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 320 240 160 100 I - COLLECTOR CURRENT (mA) ...
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Typical Common Emitter Characteristics Common Emitter Characteristics COLLECTOR CURRENT ...
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Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Timer NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time NPN General Purpose Amplifier 1.0 K 500 - 1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...