BC337 Fairchild Semiconductor, BC337 Datasheet
BC337
Manufacturer Part Number
BC337
Description
TRANSISTOR NPN 45V 800MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC33725TA.pdf
(3 pages)
Specifications of BC337
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC337
Manufacturer:
PHILIPS
Quantity:
5 200
Part Number:
BC337
Manufacturer:
KEC
Quantity:
20 000
Company:
Part Number:
BC337-025G
Manufacturer:
ON Semiconductor
Quantity:
2 100
Company:
Part Number:
BC337-16
Manufacturer:
FSC
Quantity:
4 540
Part Number:
BC337-16
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
BC337-25
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BC337-25RL1G
Manufacturer:
ON/安森美
Quantity:
20 000
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CES
EBO
JC
JA
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings*
, T
*
Thermal Characteristics
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
E
Derate above 25 C
B
C
BC337-16
BC337-25
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
BC337-16 / BC337-25
Max
83.3
625
200
5.0
-55 to +150
Value
5.0
1.0
45
50
Units
Units
mW/ C
mW
C/W
C/W
V
V
V
A
C
33716-25, Rev B
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BC337 Summary of contents
Page 1
... Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted BC337-16 / BC337-25 Value Units 5.0 V 1.0 A -55 to +150 C Max Units 625 mW 5 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Em itter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CES V Em itter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Em itter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...