2N3904BU Fairchild Semiconductor, 2N3904BU Datasheet - Page 3

IC TRANS NPN SS GP 200MA TO-92

2N3904BU

Manufacturer Part Number
2N3904BU
Description
IC TRANS NPN SS GP 200MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N3904BU

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
100
Power Dissipation
625mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
2N3904FS

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Manufacturer
Quantity
Price
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Typical Characteristics
500
100
0.1
500
400
300
200
100
10
0.8
0.6
0.4
1
0
25
1
0.1
0.1
Voltage vs Collector Current
Typical Pulsed Current Gain
V
CB
- 40 °C
vs Ambient Temperature
Base-Emitter Saturation
Collector-Cutoff Current
= 30V
- 40 °C
I
T - AMBIENT TEMPERATURE ( C)
I
vs Collector Current
= 10
50
C
125 °C
A
C
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
25 °C
1
1
75
25 °C
125 °C
100
10
10
V
125
°
CE
= 5V
100
100
150
0.15
0.05
0.8
0.6
0.4
0.2
10
0.1
5
4
3
2
1
1
0.1
0.1
0.1
NPN General Purpose Amplifier
V
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
= 5V
- 40 °C
I
Reverse Bias Voltage
I
= 10
C
C
REVERSE BIAS VOLTAGE (V)
Collector Current
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
Capacitance vs
1
1
1
25 °C
25 °C
C ibo
10
125 °C
10
10
125 °C
f = 1.0 MHz
- 40 °C
C obo
(continued)
100
100
100

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