2N3904BU Fairchild Semiconductor, 2N3904BU Datasheet

2N3904BU

Manufacturer Part Number

2N3904BU

Description

IC TRANS NPN SS GP 200MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.2N3904TF.pdf (7 pages)

Specifications of 2N3904BU

Transistor Type

NPN

Current - Collector (ic) (max)

200mA

Voltage - Collector Emitter Breakdown (max)

40V

Vce Saturation (max) @ Ib, Ic

300mV @ 5mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 10mA, 1V

Power - Max

625mW

Frequency - Transition

300MHz

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

40V

Collector-base Voltage

60V

Emitter-base Voltage

Collector Current (dc) (max)

200mA

Dc Current Gain (min)

100

Power Dissipation

625mW

Frequency (max)

300MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-92

Configuration

Single

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

40 V

Emitter- Base Voltage Vebo

6 V

Continuous Collector Current

0.2 A

Maximum Dc Collector Current

0.2 A

Maximum Operating Frequency

300 MHz

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

100

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Lead Free Status / Rohs Status

Compliant

Other names

2N3904FS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N3904BU

Manufacturer:

MOT

Quantity:

1 000

Company:

H&T Electronics

Part Number:

2N3904BU

Quantity:

21 949

Company:

H&T Electronics

Part Number:

2N3904BU

Quantity:

2 500

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Download datasheet (112Kb)

2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Absolute Maximum Ratings*

, T

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.

The useful dynamic range extends to 100 mA as a switch and to

100 MHz as an amplifier.

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

stg

2N3904

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

TO-92

Characteristic

Parameter

MMBT3904

SOT-23

Mark: 1A

= 25°C unless otherwise noted

2N3904

83.3

625

200

5.0

*MMBT3904

Max

350

357

2.8

-55 to +150

Value

SOT-223

PZT3904

200

6.0

**PZT3904

1,000

2N3904/MMBT3904/PZT3904, Rev A

125

8.0

Units

mW/ C

Units

C/W

Related parts for 2N3904BU

2N3904BU Summary of contents

Page 1

... Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ** Device mounted on FR-4 PCB 1.5 mm; mounting pad for the collector lead min 2001 Fairchild Semiconductor Corporation MMBT3904 C E SOT-23 B Mark 25°C unless otherwise noted A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE V Collector-Emitter ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...

Page 6

Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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