MPSA92 Fairchild Semiconductor, MPSA92 Datasheet - Page 2
![TRANSISTOR AMP PNP SS 300V TO-92](/photos/5/68/56860/mpsa92_sml.jpg)
MPSA92
Manufacturer Part Number
MPSA92
Description
TRANSISTOR AMP PNP SS 300V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTA92.pdf
(14 pages)
Specifications of MPSA92
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 30mA, 10V
Power - Max
625mW
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MPSA92
MPSA92FS
MPSA92FS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPSA92
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MPSA92,116
Manufacturer:
NXP
Quantity:
2 000
Part Number:
MPSA92-AP
Manufacturer:
MCCSEMI
Quantity:
20 000
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
Symbol
CBO
EBO
T
FE
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
Spice Model
PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5
Vtf=22 Xtf=270 Rb=10)
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
140
120
100
)
)
80
60
40
20
0
0.1
V = 5V
CE
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
I
vs Collector Current
C
DC Current Gain
- COLLECTOR CURRENT (mA)
1
Parameter
125 °C
25 °C
- 40 ° C
10
TA = 25°C unless otherwise noted
100
I
I
I
V
V
I
I
I
I
I
I
f = 100 MHz
V
C
C
E
C
C
C
C
C
C
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 100 A, I
= 1.0 mA, V
= 10 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 10 mA, V
= 200 V, I
= 3.0 V, I
= 20 V, I
Test Conditions
0.6
0.4
0.2
B
B
E
B
C
E
C
CE
CE
CE
E
CE
= 2.0 mA
= 2.0 mA
= 0, f = 1.0 MHz
0.1
= 0
= 0
= 0
= 0
= 0
= 10 V
= 10 V
= 20 V,
= 10 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
PNP High Voltage Amplifier
I
C
- COLLECTOR CURRENT (mA)
1
Min
300
300
5.0
25 °C
25
40
25
50
10
Max
0.25
0.1
0.5
0.9
6.0
125 °C
- 40 °C
(continued)
Units
MHz
pF
100
V
V
V
V
V
A
A
3