MMBTA92 Fairchild Semiconductor, MMBTA92 Datasheet - Page 2

• Manufacturer Part Number: MMBTA92
• Description: TRANSISTOR HIVOLT PNP AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA92

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA92FSTR

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
Symbol
CBO
EBO
T
FE
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
Spice Model
PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5
Vtf=22 Xtf=270 Rb=10)
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
140
120
100
)
)
80
60
40
20
0
0.1
V = 5V
CE
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
I
vs Collector Current
C
DC Current Gain
- COLLECTOR CURRENT (mA)
1
Parameter
125 °C
25 °C
- 40 ° C
10
TA = 25°C unless otherwise noted
100
I
I
I
V
V
I
I
I
I
I
I
f = 100 MHz
V
C
C
E
C
C
C
C
C
C
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 100 A, I
= 1.0 mA, V
= 10 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 10 mA, V
= 200 V, I
= 3.0 V, I
= 20 V, I
Test Conditions
0.6
0.4
0.2
B
B
E
B
C
E
C
CE
CE
CE
E
CE
= 2.0 mA
= 2.0 mA
= 0, f = 1.0 MHz
0.1
= 0
= 0
= 0
= 0
= 0
= 10 V
= 10 V
= 20 V,
= 10 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
PNP High Voltage Amplifier
I
C
- COLLECTOR CURRENT (mA)
1
Min
300
300
5.0
25 °C
25
40
25
50
10
Max
0.25
0.1
0.5
0.9
6.0
125 °C
- 40 °C
(continued)
Units
MHz
pF
100
V
V
V
V
V
A
A
3