MMBT3906T Fairchild Semiconductor, MMBT3906T Datasheet
MMBT3906T
Manufacturer Part Number
MMBT3906T
Description
TRANS PNP 40V 200MA SOT-523F
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT3906T.pdf
(4 pages)
Specifications of MMBT3906T
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-523F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MMBT3906TTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3906T
Manufacturer:
Fairchild Semiconductor
Quantity:
610 642
Part Number:
MMBT3906T
Manufacturer:
ST/先科
Quantity:
20 000
Company:
Part Number:
MMBT3906T-7-F
Manufacturer:
Diodes Inc
Quantity:
106 645
Company:
Part Number:
MMBT3906T-7-F
Manufacturer:
DIODES
Quantity:
955
Part Number:
MMBT3906TAB NS66
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
MMBT3906TT1
Manufacturer:
AVAGO
Quantity:
6 334
Company:
Part Number:
MMBT3906TT1G
Manufacturer:
ON Semiconductor
Quantity:
74 645
Part Number:
MMBT3906TT1G
Manufacturer:
ON/安森美
Quantity:
20 000
© 2007 Fairchild Semiconductor Corporation
MMBT3906T Rev. 1.0.0
MMBT3906T
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
•
Absolute Maximum Ratings
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* Minimum land pad.
Electrical Characteristics*
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
V
V
V
I
T
T
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
P
R
BV
BV
BV
I
h
V
V
f
C
C
t
t
t
t
C
CEX
T
d
r
s
f
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
θJA
ob
ib
As complementary type, NPN MMBT3904T is recommended
Symbol
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Collector Power Dissipation, by R
Thermal Resistance, Junction to Ambient
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
θJA
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CE
CB
EB
CC
= -10μA, I
= -10μA, I
= -1mA, I
= -10mA, I
= -50mA, I
= -10mA, I
= -50mA, I
=- I
= -0.5V, I
= -30V, V
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= -20V, I
= -5V, I
= -3V, I
B2
1
Test Condition
= -1mA
C
C
C
C
C
B
E
C
C
E
=- 0.1mA
= -1mA
= -10mA
= -50mA
= -100mA
B
B
B
B
C
= 0
= 0, f = 1MHz
C
= -10mA
EB(OFF)
= 0
= 0
= -1mA
= -5mA
= -1mA
= -5mA
= -10mA, f = 100MHz
= 0, f = 1MHz
=-0.3V
-55 ~ 150
Value
Max
200
150
250
500
-40
-40
-5
Min.
-0.65
100
250
-40
40
60
80
60
30
-5
Max.
-0.25
-0.85
-0.95
-0.4
300
225
-50
7.0
15
35
35
75
C
Marking : A06
SOT-523F
February 2008
www.fairchildsemi.com
Unit
Unit
°C/W
mW
mA
°C
°C
V
V
V
B
Unit
MHz
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
E
Related parts for MMBT3906T
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MMBT3906T Summary of contents
Page 1
... Rise Time r t Storage Time s t Fall Time Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0 25°C unless otherwise noted a T =25°C unless otherwise noted a θJA T =25°C unless otherwise noted ...
Page 2
... Figure 3. Base- Emitter Saturation Voltage 1000 100 10 Collector Current, [mA] Figure 5. Collector- Base Capacitance Base- Collector Reverse Voltage, V © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 Figure 2. Collector-Emitter Saturation Voltage 1000 o C Vce= = 100 100 Figure 4. Collector- Base Leakage Current 100 Ic=10* = ...
Page 3
... Case Material(Molded Plastic): KTMC1060SC • UL Flammability classification rating : “V0” • Moisture Sensitivity level per JESD22-A1113B : MSL 1 • Lead terminals solderable per MIL-STD7502026 /JESD22A121 • Lead Free Plating : Pure Tin(Matte) © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 SOT-523F 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT3906T Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...