MMBT3904T Fairchild Semiconductor, MMBT3904T Datasheet - Page 2

• Manufacturer Part Number: MMBT3904T
• Description: TRANS NPN 40V 200MA SOT-523F
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT3904T

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-523F
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904TTR

© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 3. Base- Emitter Saturation Voltage
Figure 5. Collector- Base Capacitance
100
1000
10
100
1
10
7
7
6
6
5
5
4
T
T
0
J
J
=-25
=25
o
o
Base- Collector Reverse Voltage, V
C
C
T
J
=25
Collector Current, [mA]
10
Collector Current, [mA]
o
C
T
J
T
=-25
J
=125
T
5
o
J
C
=75
o
C
o
100
C
T
J
=125
f=1mhz
T
o
J
C
100
cb
=75
Vce=1V
[V]
o
C
Ic=10*Ib
1000
10
2
Figure 2. Collector-Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
Figure 6. Power Derating
1000
100
1000
300
250
200
150
100
100
50
10
0
10
1
10
0
25
Base-Collector Revere Voltage, [V]
20
Ambient Temperature, T
Collector Current, [mA]
50
T
J
=125
30
T
T
J
T
J
=75
o
=25
75
C
J
T
=75
T
J
=-25
J
=125
o
o
C
C
o
C
o
C
40
o
100
C
a
T
[
o
J
C]
=-25
100
125
o
50
C
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T
Ic=10*Ib
J
=25
o
150
C
60