MMBT2907 Fairchild Semiconductor, MMBT2907 Datasheet
MMBT2907
Manufacturer Part Number
MMBT2907
Description
TRANSISTOR PNP GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT2907.pdf
(3 pages)
Specifications of MMBT2907
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
5V
Collector Current (dc) (max)
800mA
Dc Current Gain (min)
100
Power Dissipation
350mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT2907
MMBT2907TR
MMBT2907TR
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1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
, T
*
*
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B
E
PN2907
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBT2907
SOT-23
Mark: 2B
PN2907
83.3
625
200
5.0
C
Discrete POWER & Signal
Max
-55 to +150
B
Value
*MMBT2907
800
5.0
40
60
Technologies
350
357
2.8
E
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
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MMBT2907 Summary of contents
Page 1
... Fairchild Semiconductor Corporation MMBT2907 TO-92 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted PN2907 625 83.3 200 Discrete POWER & Signal Technologies Value Units 5.0 V 800 mA -55 to +150 C Max Units *MMBT2907 350 mW 5.0 2.8 mW/ C C/W 357 C/W ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Base Cutoff Current B I Collector Cutoff Current CBO ON CHARACTERISTICS ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...