MT48LC16M16A2P-75 IT:D TR Micron Technology Inc, MT48LC16M16A2P-75 IT:D TR Datasheet - Page 70
![DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R](/photos/7/22/72261/557-54-tsop_sml.jpg)
MT48LC16M16A2P-75 IT:D TR
Manufacturer Part Number
MT48LC16M16A2P-75 IT:D TR
Description
DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R
Manufacturer
Micron Technology Inc
Type
SDRAMr
Specifications of MT48LC16M16A2P-75 IT:D TR
Density
256 Mb
Maximum Clock Rate
133 MHz
Package
54TSOP-II
Address Bus Width
15 Bit
Operating Supply Voltage
3.3 V
Maximum Random Access Time
6|5.4 ns
Operating Temperature
-40 to 85 °C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Package / Case
54-TSOP II
Organization
16Mx16
Address Bus
15b
Access Time (max)
6/5.4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
557-1058-2
Figure 39: READ With Auto Precharge Interrupted by a READ
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
states
Command
Note:
Address
Bank m
Bank n
CLK
DQ
registered. The last valid data WRITE to bank n will be data registered one clock prior to
a WRITE to bank m (see Figure 46 (page 76)).
1. DQM is LOW.
Page active
NOP
T0
READ - AP
Page active
Bank n,
Bank n
T1
Col a
READ with burst of 4
T2
CL = 3 (bank n)
NOP
70
READ - AP
Bank m,
T3
Bank m
Col d
Interrupt burst, precharge
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4
CL = 3 (bank m)
NOP
t
RP - bank n
D
OUT
T5
NOP
256Mb: x4, x8, x16 SDRAM
D
OUT
PRECHARGE Operation
T6
NOP
D
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OUT
Idle
T7
Don’t Care
NOP
t RP - bank m
D
Precharge
OUT