MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 75

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 38: WRITE-to-READ – Uninterrupting
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Address
t
t
t
DQSSnom
DQSSmin
DQSSmax
DQS
DQ
DQS
DQ
DQS
DQ
CK#
DM
DM
DM
CK
5
5
5
1
WRITE
Bank a,
Col b
T0
Notes:
t
t
2,3
t
DQSS
DQSS
DQSS
1. The READ and WRITE commands are to the same device. However, the READ and WRITE
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. An uninterrupted burst of 4 is shown.
4.
5. D
D
IN
commands may be to different devices, in which case
READ command could be applied earlier.
t
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
IN
b = data-in for column b; D
D
D
IN
IN
T1n
D
IN
D
D
IN
IN
NOP
D
T2
IN
D
D
IN
IN
D
T2n
IN
75
D
IN
NOP
T3
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
t
WTR
n = data-out for column n.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
4
Bank a,
READ
Col n
T4
Don’t Care
t
WTR is not required and the
CL = 2
CL = 2
CL = 2
T5
NOP
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WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
OUT
OUT
T6
NOP
D
D
D
OUT
OUT
OUT
T6n