MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 28

DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT46H8M32LFB5-6 IT:H

Manufacturer Part Number
MT46H8M32LFB5-6 IT:H
Description
DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H8M32LFB5-6 IT:H

Density
256 Mb
Maximum Clock Rate
166 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
6.5|5 ns
Operating Temperature
-40 to 85 °C
Organization
8Mx32
Address Bus
14b
Access Time (max)
6.5/5ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
26. The maximum limit for this parameter is not a device limit. The device will operate with
27. At least 1 clock cycle is required during
28. Clock must be toggled a minimum of two times during the
a greater value for this parameter, but system performance (bus turnaround) will de-
grade accordingly.
Electrical Specifications – AC Operating Conditions
28
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
WR time when in auto precharge mode.
t
XSR period.
©2008 Micron Technology, Inc. All rights reserved.

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