MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 5

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

List of Tables
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: VFBGA Ball Descriptions .................................................................................................................. 13
Table 3: Absolute Maximum Ratings .............................................................................................................. 17
Table 4: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 17
Table 5: Capacitance (x16, x32) ...................................................................................................................... 19
Table 6: I
Table 7: I
Table 8: I
Table 9: Electrical Characteristics and Recommended AC Operating Conditions ............................................. 24
Table 10: Target Output Drive Characteristics (Full Strength) .......................................................................... 29
Table 11: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 30
Table 12: Target Output Drive Characteristics (One-Half Strength) ................................................................. 31
Table 13: Truth Table – Commands ............................................................................................................... 33
Table 14: DM Operation Truth Table ............................................................................................................. 34
Table 15: Truth Table – Current State Bank n – Command to Bank n ............................................................... 40
Table 16: Truth Table – Current State Bank n – Command to Bank m .............................................................. 41
Table 17: Truth Table – CKE .......................................................................................................................... 44
Table 18: Burst Definition Table .................................................................................................................... 50
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
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6 Specifications and Conditions ................................................................................................... 22
Specifications and Conditions (x16) ............................................................................................ 20
Specifications and Conditions (x32) ............................................................................................ 21
5
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.